IIIT Hyderabad Publications |
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BSIM-IMG with Improved Surface Potential Calculation RecipeAuthors: Srivatsava Jandhyala,Pragya Kushwaha,Chandan Yadav,Harshit Agarwal,Yogesh Singh Chauhan,Sourabh Khandelwal Conference: IEEE India Conference, 2014 (INDICON-2014 2014) Date: 2014-12-11 Report no: IIIT/TR/2014/69 AbstractIn this paper, we have reported the improved surface potential calculation in the BSIM-IMG model for FDSOI MOSFETs. Model validation is done with the experimental data provided by Low-power Electronics Association and Project (LEAP). The model shows accurate behavior for C-V and I-V characteristics while keeping smooth behavior for their higher order derivatives. Model has smooth transition from weak inversion to strong inversion and satisfies DC and AC symmetry tests. Full paper: pdf Centre for VLSI and Embeded Systems Technology |
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