IIIT Hyderabad Publications |
|||||||||
|
Improved Switching Characteristics Obtained by Using High-k Dielectric Layers in 4H-SiC IGBT: Physics-Based SimulationAuthors: vidya.naidu ,Sivaprasad Kotamraju Conference: European Conference on Silicon Carbide and Related Materials (ECSCRM-2016 2016) Date: 2016-09-25 Report no: IIIT/TR/2016/65 AbstractSilicon Carbide (SiC) based MOS devices are one of the promising devices for high temperature, high switching frequency and high power applications. In this paper, the static and dynamic characteristics of an asymmetric trench gate SiC IGBT with high-K dielectrics- HfO 2 and ZrO 2 are investigated. SiC IGBT with HfO 2 and ZrO 2 exhibited higher forward transconductance ratio and lower threshold voltage compared to conventionally used SiO 2 . In addition, lower switching power losses have been observed in the case of high-K dielectrics due to reduced tail current duration. Full paper: pdf Centre for VLSI and Embeded Systems Technology |
||||||||
Copyright © 2009 - IIIT Hyderabad. All Rights Reserved. |